Export citation

Export citation

Choose format for download:

Download Citation
  • Letter

Electrically controlled emission from singlet and triplet exciton species in atomically thin light-emitting diodes

Andrew Y. Joe1, Luis A. Jauregui2, Kateryna Pistunova1, Andrés M. Mier Valdivia3, Zhengguang Lu4,5, Dominik S. Wild1, Giovanni Scuri1, Kristiaan De Greve1,6,*, Ryan J. Gelly1 et al.

You Zhou1,6,7, Jiho Sung1,6, Andrey Sushko1, Takashi Taniguchi8, Kenji Watanabe9, Dmitry Smirnov4, Mikhail D. Lukin1, Hongkun Park1,6, and Philip Kim1,3,†

  • 1Department of Physics, Harvard University, Cambridge, Massachusetts 02138, USA
  • 2Department of Physics and Astronomy, University of California, Irvine, California 92697, USA
  • 3John A. Paulson School of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts 02138, USA
  • 4National High Magnetic Field Laboratory, Tallahassee, Florida 32310, USA
  • 5Department of Physics, Florida State University, Tallahassee, Florida 32306, USA
  • 6Department of Chemistry and Chemical Biology, Harvard University, Cambridge, Massachusetts 02138, USA
  • 7Department of Materials Science and Engineering, University of Maryland, College Park, Maryland 20742, USA
  • 8International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
  • 9Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan

  • *Present address: IMEC, 3001 Leuven, Belgium.
  • †Author to whom correspondence should be addressed: pkim@physics.harvard.edu

Phys. Rev. B 103, L161411 – Published 29 April, 2021

DOI: https://doi.org/10.1103/PhysRevB.103.L161411

Abstract

We report electrically tunable spin singlet and triplet exciton emission from atomically aligned transition metal dichalcogenide (TMD) heterostructures. The observation of these states in both 0° and 60° heterostructures provides the stacking orientation degree of freedom for polarization switching in interlayer excitons. We confirm the spin configurations of the light-emitting excitons employing magnetic fields to measure effective exciton g factors. The interlayer tunneling current across the TMD heterostructure enables the electrical generation of singlet and triplet exciton emission in this atomically thin p-n junction. We demonstrate tunability between the singlet and triplet exciton photoluminescence via electrostatic gates and excitation power. By tuning the gates and interlayer bias voltage, the electroluminescence of the singlet and triplet can be switched with ratios of 10:1. Atomically thin TMD heterostructure light-emitting diodes thus enable a route for optoelectronic devices that can configure spin and valley quantum states independently.

Physics Subject Headings (PhySH)

Authorization Required

We need you to provide your credentials before accessing this content.

Supplemental Material (Subscription Required)

References (Subscription Required)

Outline

Information

Sign In to Your Journals Account

Filter

Filter

Article Lookup

Enter a citation