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Optically induced spin current in monolayer NbSe2

Ren Habara1 and Katsunori Wakabayashi1,2,3

  • 1Department of Nanotechnology for Sustainable Energy, School of Science and Technology, Kwansei Gakuin University, Gakuen 2-1, Sanda 669-1337, Japan
  • 2National Institute for Materials Science (NIMS), Namiki 1-1, Tsukuba 305-0044, Japan
  • 3Center for Spintronics Research Network (CSRN), Osaka University, Toyonaka 560-8531, Japan

Phys. Rev. B 103, L161410 – Published 27 April, 2021

DOI: https://doi.org/10.1103/PhysRevB.103.L161410

Abstract

Monolayer NbSe2 is a metallic two-dimensional (2D) transition-metal dichalcogenide material. Owing to the lattice structure and the strong atomic spin-orbit coupling (SOC) field, monolayer NbSe2 possesses Ising-type SOC which acts as an effective Zeeman field, leading to the unconventional topological spin properties. In this paper, we numerically calculate spin-dependent optical conductivity of monolayer NbSe2 using Kubo formula based on an effective tight-binding model which includes dz2, dx2−y2, and dxy orbitals of Nb atoms. Numerical calculation indicates that the up- and down-spin have opposite sign of Hall current, so the pure spin Hall current can be generated in monolayer NbSe2 under light irradiation, owing to the topological nature of monolayer NbSe2, i.e., finite spin Berry curvature. The spin Hall angle is also evaluated. The optically induced spin Hall current can be enhanced by the electron doping and persists even at room temperature. Our results will serve to design opt-spintronics devices such as spin current harvesting by light irradiation on the basis of 2D materials.

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