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Infrared study of the multiband low-energy excitations of the topological antiferromagnet MnBi2Te4

Bing Xu1, Y. Zhang2, E. H. Alizade3, Z. A. Jahangirli3,4, F. Lyzwa1, E. Sheveleva1, P. Marsik1, Y. K. Li5,6, Y. G. Yao5,6 et al.

Z. W. Wang5,6,*, B. Shen2,†, Y. M. Dai7, V. Kataev8, M. M. Otrokov9,10, E. V. Chulkov11,12,13, N. T. Mamedov3,‡, and C. Bernhard1,§

  • 1University of Fribourg, Department of Physics and Fribourg Center for Nanomaterials, Chemin du Musée 3, CH-1700 Fribourg, Switzerland
  • 2Sate Key Laboratory of Optoelectronic Materials and Technologies, School of Physics, Sun Yat-Sen University, Guangzhou, Guangdong 510275, China
  • 3Institute of Physics, Azerbaijan National Academy of Sciences, Baku AZ1143, Azerbaijan
  • 4Baku State University, Z. Khalilov str. 23, AZ1148, Baku, Azerbaijan
  • 5Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement, Ministry of Education, School of Physics, Beijing Institute of Technology, Beijing 100081, China
  • 6Beijing Key Lab of Nanophotonics and Ultrafine Optoelectronic Systems, Beijing Institute of Technology, Beijing 100081, China
  • 7National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, China
  • 8Leibniz Institute for Solid State and Materials Research IFW Dresden, 01069 Dresden, Germany
  • 9Centro de Física de Materiales (CFM-MPC), Centro Mixto CSIC-UPV/EHU, 20018 Donostia-San Sebastián, Basque Country, Spain
  • 10IKERBASQUE, Basque Foundation for Science, 48011 Bilbao, Basque Country, Spain
  • 11Donostia International Physics Center, 20018 Donostia-San Sebastian, Basque Country, Spain
  • 12Departamento de Física de Materiales UPV/EHU, 20080 Donostia-San Sebastian, Basque Country, Spain
  • 13Saint Petersburg State University, Laboratory of Electronic and Spin Structure of Nanosystems, 198504 Saint Petersburg, Russia

  • *zhiweiwang@bit.edu.cn
  • †shenbing@mail.sysu.edu.cn
  • ‡n.mamedov@physics.ab.az
  • §christian.bernhard@unifr.ch

Phys. Rev. B 103, L121103 – Published 3 March, 2021

DOI: https://doi.org/10.1103/PhysRevB.103.L121103

Abstract

With infrared spectroscopy, we studied the bulk electronic properties of the topological antiferromagnet MnBi2Te4 with TN≃25K. With the support of band-structure calculations, we assign the intra- and interband excitations and determine the band gap of Eg≈0.17 eV. We also obtain evidence for two types of conduction bands with light and very heavy carriers. The multiband free-carrier response gives rise to an unusually strong increase of the combined plasma frequency, ωpl, below 300 K. The band reconstruction below TN yields an additional increase of ωpl and a splitting of the transition between the two conduction bands by about 54 meV. Our study thus reveals a complex and strongly temperature-dependent multiband low-energy response that has important implications for the study of the surface states and device applications.

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