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Anomalous Hall resistivity and possible topological Hall effect in the EuAl4 antiferromagnet

T. Shang1,2,*, Y. Xu3,†, D. J. Gawryluk2, J. Z. Ma4,5, T. Shiroka6,7, M. Shi5, and E. Pomjakushina2,‡

  • 1Key Laboratory of Polar Materials and Devices (MOE), School of Physics and Electronic Science, East China Normal University, Shanghai 200241, China
  • 2Laboratory for Multiscale Materials Experiments, Paul Scherrer Institut, CH-5232 Villigen PSI, Switzerland
  • 3Physik-Institut, Universität Zürich, Winterthurerstrasse 190, CH-8057 Zürich, Switzerland
  • 4Department of Physics, City University of Hong Kong, Kowloon, Hong Kong
  • 5Swiss Light Source, Paul Scherrer Institut, CH-5232 Villigen PSI, Switzerland
  • 6Laboratorium für Festkörperphysik, ETH Zürich, CH-8093 Zurich, Switzerland
  • 7Laboratory for Muon-Spin Spectroscopy, Paul Scherrer Institut, CH-5232 Villigen PSI, Switzerland

  • *tian.shang@psi.ch
  • †yangxu@physik.uzh.ch
  • ‡ekaterina.pomjakushina@psi.ch

Phys. Rev. B 103, L020405 – Published 11 January, 2021

DOI: https://doi.org/10.1103/PhysRevB.103.L020405

Abstract

We report the observation of anomalous Hall resistivity in single crystals of EuAl4, a centrosymmetric tetragonal compound, which exhibits coexisting antiferromagnetic (AFM) and charge-density-wave (CDW) orders with onset at TN∼15.6K and TCDW∼140K, respectively. In the AFM state, when the magnetic field is applied along the c-axis direction, EuAl4 undergoes a series of metamagnetic transitions. Within this field range, we observe a clear humplike anomaly in the Hall resistivity, representing part of the anomalous Hall resistivity. By considering different scenarios, we conclude that such a humplike feature is most likely a manifestation of the topological Hall effect, normally occurring in noncentrosymmetric materials known to host nontrivial topological spin textures. In view of this, EuAl4 would represent a rare case where the topological Hall effect not only arises in a centrosymmetric structure, but it also coexists with CDW order.

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