Pressure-induced superconductivity in the van der Waals semiconductor violet phosphorus
Phys. Rev. B 112, 104505 – Published 10 September, 2025
DOI: https://doi.org/10.1103/9xpr-52xx
Abstract
The van der Waals (vdW) semiconductor black phosphorus (BP) has been extensively studied, especially since the discovery of phosphorene. In contrast, its sister compound violet phosphorus (VP), another vdW semiconductor, has received far less attention. Here we report the pressure-induced superconductivity in VP up to GPa. The zero-resistance superconducting transition emerges at 3.57 GPa, due to a structural phase transition from monoclinic to rhombohedral structure. The superconducting transition temperature shows a plateau of K from 3.6–15 GPa in the structure, then jumps to another plateau of K above 15 GPa in the simple cubic structure. We establish and compare the temperature-pressure superconducting phase diagram of VP with that of BP. For BP, the superconductivity appears with an orthorhombic structural transition at a critical pressure of 5 GPa, with a lower than VP. The pressure-induced structural phase transition and superconductivity in VP demonstrate its pressure-sensitive and easily tunable electronic properties. These properties suggest promising prospects for further electronic and optoelectronic applications, particularly given its stability as a vdW semiconductor at ambient conditions.