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  • Letter

Luttinger-compensated bipolarized magnetic semiconductor

Peng-Jie Guo1,2,*, Huan-Cheng Yang1,2, Xiao-Yao Hou1,2, Ze-Feng Gao1,2, Wei Ji1,2,†, and Zhong-Yi Lu1,2,3,‡

  • 1Department of Physics and Beijing Key Laboratory of Opto-electronic Functional Materials & Micro-nano Devices, Renmin University of China, Beijing 100872, China
  • 2Key Laboratory of Quantum State Construction and Manipulation (Ministry of Education), Renmin University of China, Beijing 100872, China
  • 3Hefei National Laboratory, Hefei 230088, China

  • *Contact author: guopengjie@ruc.edu.cn
  • †Contact author: wji@ruc.edu.cn
  • ‡Contact author: zlu@ruc.edu.cn

Phys. Rev. B 112, L180405 – Published 13 November, 2025

DOI: https://doi.org/10.1103/9syc-71w8

Abstract

Altermagnetic materials, with real-space antiferromagnetic arrangement and reciprocal-space anisotropic spin splitting, have attracted much attention. However, the spin splitting is small in most altermagnetic materials, which is a disadvantage to their application in electronic devices. In this study, based on symmetry analysis and the first-principles electronic structure calculations, we predict two Luttinger compensated bipolarized magnetic semiconductors Mn(CN)2 and Co(CN)2 with s-wave spin splitting as in the ferromagnetic materials. Our further analysis shows that the Luttinger compensated magnetism here depends not only on spin group symmetry, but also on the crystal field splitting and the number of d-orbital electrons. In addition, the polarized charge density indicates that both Mn(CN)2 and Co(CN)2 have the quasisymmetry Tτ, resulting from the crystal field splitting and the number of d-orbital electrons. The Luttinger compensated magnetism not only has the zero total magnetic moment as the antiferromagnetism, but also has the s-wave spin splitting as the ferromagnetism, thus our work not only provides theoretical guidance for searching Luttinger compensated magnetic materials with distinctive properties, but also provides a material basis for the application in spintronic devices.

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