Contrary to the conventional view that defects degrade electrical transport, we demonstrate through quantum transport calculations that engineering extended line defects in two-dimensional black arsenic (b-$\mathit{As}$) can anomalously enhance electron mobility, electrical conductance, thermoelectric power factor, and figure of merit (ZT). These defects simultaneously suppress lattice thermal conductivity while preserving excellent electrical transport, leading to an over threefold increase in ZT (up to 1.52) compared to pristine b-$\mathit{As}$. This enhancement originates from a resonant coupling between defect-induced bands and intrinsic valence bands—a mechanism absent in black phosphorus due to its out-of-plane $p_z$ orbital character. Our work establishes a general design principle for low-dimensional thermoelectrics: materials with in-plane orbital-dominated band edges are ideal platforms for line-defect engineering toward synergistic optimization of electrical and thermal transport properties.

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• Defects
• Electrical conductivity
• Electrical properties
• Electronic structure
• First-principles calculations
• Surface reconstruction
• Thermal conductivity
• Thermoelectric effects
• Thermoelectrics