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    Room-temperature exciton-trion interconversion via multistrain domains in monolayer MoSe2

    Qi Zheng1,2,*, Sabir Hussain3,*, Le Lei4, Chi Zhang1, Mengmeng Zhang1, Senhong Yang1, Taishen Wu1, Xuying Zhong5, Rui Xu6,† et al.

    Zhihai Cheng6,‡, Dongsheng Tang5, and Weichang Zhou5,§

    • 1School of Physics and Electronics, Hunan University, Changsha 410082, People's Republic of China
    • 2Greater Bay Area Innovation Institute, Hunan University, Guangzhou 511300, People's Republic of China
    • 3Advanced Material and Surface Group, Tyndall National Institute, University College Cork, Cork T12R5CP, Ireland
    • 4Institute of Quantum Materials and Physics, Henan Academy of Sciences, Zhengzhou 450046, People's Republic of China
    • 5School of Physics and Electronics, Key Laboratory of Low-dimensional Quantum Structures and Quantum Control of Ministry of Education, Key Laboratory for Multifunctional Ionic Electronic Materials and Devices of Hunan Normal University, Hunan Province Fundamental Research Center for Quantum Effects and Quantum Technology, Hunan Normal University, Changsha 410081, People's Republic of China
    • 6Key Lab Quantum State Construction & Manipulation (Ministry of Education), School of Physics, Renmin University of China, Beijing 100872, People's Republic of China

    • *These authors contributed equally to this work.
    • †Contact author: ruixu@ruc.edu.cn
    • ‡Contact author: zhihaicheng@ruc.edu.cn
    • §Contact author: wchangzhou@hunnu.edu.cn

    Phys. Rev. B 114, 165304 – Published 28 September, 2026

    DOI: https://doi.org/10.1103/9ptw-c22l

    Abstract

    Two-dimensional transition metal dichalcogenides offer unprecedented opportunities for quantum photonics through strain-mediated exciton engineering. However, the paradoxical coexistence of strain-gradient-driven exciton funneling and efficient trion formation has remained unresolved. Here, we address this challenge by demonstrating that multistrain domains enable room-temperature exciton-trion interconversion in strain-engineered MoSe2 monolayers. This interconversion is most likely driven by flexoelectric fields arising from interfacial strain gradients. Using a thermal strain-modulated chemical vapor deposition approach, we have engineered interfacial strain gradients (∼2.0%µm−1) that induce flexoelectric polarization, generating symmetry-broken quantum wells and driving near-unity quantum yield exciton-trion interconversion at room temperature. Crucially, through multimodal characterization techniques, we have unraveled the long-standing paradox in exciton dynamics under heterogeneous strain fields. Our findings demonstrate that the flexoelectric field likely plays a decisive role in decoupling electron-hole pair dynamics while maintaining charge neutrality—a critical mechanism mediated through electric effects rather than direct strain influences. This breakthrough significantly bridges the gap between two apparent contradictions in quantum phenomena: the competing processes of exciton funneling and trion formation observed in strained semiconductor systems. Further, by validating this model in flower-shaped samples with alternating curvature-induced field gradients, we establish a unified framework for deterministic exciton engineering. Our work provides fundamental insights into strain-mediated excitonics and enables scalable quantum photonic architecture through deterministic strain engineering.

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