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Optical and structural properties of p-doped Ge/SiGe multiple quantum wells for mid-infrared photonics

Stefano Calcaterra1, Marco Faverzani1, Davide Impelluso1, Daniel Chrastina1, Raffaele Giani1, Luca Anzi1, Jin H. Bae2, Camillo Tassi3, Dan Buca2 et al.

Paolo Biagioni1, Giovanni Isella1, Michele Virgilio3, and Jacopo Frigerio1,*

  • *Contact author: jacopo.frigerio@polimi.it
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Phys. Rev. B 112, 045429 – Published 28 July, 2025

DOI: https://doi.org/10.1103/9mm6-96nk

Abstract

We present a detailed study of hole-doped Ge/SiGe multiple quantum wells as a promising material platform for mid-infrared photonics. The heterostructures were grown on SiGe virtual substrates using low-energy plasma-enhanced chemical vapor deposition. Structural and compositional analyses via atom probe tomography and x-ray diffraction were employed to assess the crystal quality and retrieve the compositional profiles. The optical response of the samples, in the 4–12-µm wavelength range, was investigated as a function of the temperature and complementary Hall-effect measurements were performed providing insights into the temperature evolution of the electrical transport properties. In addition, a well-established tight-binding model was used to reproduce and interpret the experimental results starting from the calculated valence band structure.

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References (39)

  1. H. D. Yallew, M. Vlk, A. Datta, S. Alberti, R. A. Zakoldaev, J. Høvik, A. Aksnes, and J. Jágerská, Sub-PPM methane detection with mid-infrared slot waveguides, ACS Photonics 10, 4282 (2023).
  2. F. Ottonello-Briano, C. Errando-Herranz, H. Rödjegård, H. Martin, H. Sohlström, and K. B. Gylfason, Carbon dioxide absorption spectroscopy with a mid-infrared silicon photonic waveguide, Opt. Lett. 45, 109 (2020).
  3. Y.-C. Chang, P. Wägli, V. Paeder, A. Homsy, L. Hvozdara, P. van der Wal, J. Di Francesco, N. F. de Rooij, and H. P. Herzig, Cocaine detection by a mid-infrared waveguide integrated with a microfluidic chip, Lab Chip 12, 3020 (2012).
  4. L. Labadie, G. Martín, A. Ródenas, N. C. Anheier, Jr., B. Arezki, R. R. Thomson, H. A. Qiao, P. Kern, A. K. Kar, and B. E. Bernacki, Advances in the development of mid-infrared integrated devices for interferometric arrays, Proc. SPIE Int. Soc. Opt. Eng. 8445, 844515 (2012).
  5. S. Jung, D. Palaferri, K. Zhang, F. Xie, Y. Okuno, C. Pinzone, K. Lascola, and M. A. Belkin, Homogeneous photonic integration of mid-infrared quantum cascade lasers with low-loss passive waveguides on an InP platform, Optica 6, 1023 (2019).
  6. A. Gutierrez-Arroyo, E. Baudet, L. Bodiou, I. Hardy, J. Lemaitre, F. Faijan, B. Bureau, V. Nazabal, and J. Charrier, Optical characterization at 7.7 µm of an integrated platform based on chalcogenide waveguides for sensing applications in the mid-infrared, Opt. Express 24, 23109 (2016).
  7. T. Hu, B. Dong, X. Luo, T.-Y. Liow, J. Song, C. Lee, and G.-Q. Lo, Silicon photonic platforms for mid-infrared applications, Photonics Res. 5, 417 (2017).
  8. R. Soref, Mid-infrared photonics in silicon and germanium, Nat. Photonics 4, 495 (2010).
  9. D. Marris-Morini, V. Vakarin, J. M. Ramirez, Q. Liu, A. Ballabio, J. Frigerio, M. Montesinos, C. Alonso-Ramos, X. Le Roux, S. Serna, D. Benedikovic, D. Chrastina, L. Vivien, and G. Isella, Germanium-based integrated photonics from near- to mid-infrared applications, Nanophotonics 7, 1781 (2018).
  10. T. H. N. Nguyen, V. Turpaud, N. Koompai, J. Peltier, S. Calcaterra, G. Isella, J.-R. Coudevylle, C. Alonso-Ramos, L. Vivien, J. Frigerio, and D. Marris-Morini, Integrated PIN modulator and photodetector operating in the mid-infrared range from 5.5 µm to 10 µm, Nanophotonics 13, 1803 (2024).
  11. L. Reid, M. Nedeljković, W. Cao, L. Mastronardi, R. Slavík, and G. Mashanovich, Photodetection at 3.8 µm using intrinsic monolithic integrated germanium photodiodes, in IEEE 17th International Conference on Group IV Photonics, Malaga, Spain (GFP 2021) (IEEE, Piscataway, NJ, 2021).
  12. G. Ciasca, M. De Seta, G. Capellini, F. Evangelisti, M. Ortolani, M. Virgilio, G. Grosso, A. Nucara, and P. Calvani, Terahertz intersubband absorption and conduction band alignment in n-type Si/SiGe multiple quantum wells, Phys. Rev. B 79, 085302 (2009).
  13. Y. Busby, M. De Seta, G. Capellini, F. Evangelisti, M. Ortolani, M. Virgilio, G. Grosso, G. Pizzi, P. Calvani, S. Lupi, M. Nardone, G. Nicotra, and C. Spinella, Near- and far-infrared absorption and electronic structure of Ge-SiGe multiple quantum wells, Phys. Rev. B 82, 205317 (2010).
  14. M. De Seta, G. Capellini, M. Ortolani, M. Virgilio, G. Grosso, G. Nicotra, and P. Zaumseil, Narrow intersubband transitions in n-type Ge/SiGe multi-quantum wells: Control of the terahertz absorption energy trough the temperature dependent depolarization shift, Nanotechnology 23, 465708 (2012).
  15. S. K. Chun, D. S. Pan, and K. L. Wang, Intersubband transitions in a p-type δ-doped SiGe/Si quantum well, Phys. Rev. B 47, 15638 (1993).
  16. M. Helm, P. Kruck, T. Fromherz, A. Weichselbaum, M. Seto, G. Bauer, Z. Moussa, P. Boucaud, F. H. Julien, J.-M. Lourtioz, J. F. Nützel, and G. Abstreiter, IR studies of p-type Si/SiGe quantum wells: intersubband absorption, IR detectors, and second-harmonic generation, Thin Solid Films 294, 330 (1997).
  17. T. Fromherz, M. Meduňa, G. Bauer, A. Borak, C. V. Falub, S. Tsujino, H. Sigg, and D. Grützmacher, Intersubband absorption of strain-compensated Si1−xGex valence-band quantum wells with 0.7≤x≤0.85, J. Appl. Phys. 98, 044501 (2005).
  18. P. Boucaud, L. Wu, F. H. Julien, J.-M. Lourtioz, I. Sagnes, Y. Campidelli, R. Prazeres, and J.-M. Ortega, Spectroscopy of intersubband transitions in Si−Si1−xGex quantum wells, Thin Solid Films 294, 173 (1997).
  19. K. Gallacher, A. Ballabio, R. W. Millar, J. Frigerio, A. Bashir, I. MacLaren, G. Isella, M. Ortolani, and D. J. Paul, Mid-infrared intersubband absorption from p-Ge quantum wells grown on Si substrates, Appl. Phys. Lett. 108, 091114 (2016).
  20. J. Frigerio, C. Ciano, J. Kuttruff, A. Mancini, A. Ballabio, D. Chrastina, V. Falcone, M. De Seta, L. Baldassarre, J. Allerbeck, D. Brida, L. Zeng, E. Olsson, M. Virgilio, and M. Ortolani, Second Harmonic generation in germanium quantum Wells for nonlinear silicon photonics, ACS Photonics 8, 3573 (2021).
  21. A. Barzaghi, V. Falcone, S. Calcaterra, D. Marris-Morini, M. Virgilio, and J. Frigerio, Modelling of an intersubband quantum confined Stark effect in Ge quantum wells for mid-infrared photonics, Opt. Express 30, 46710 (2022).
  22. M. Virgilio and G. Grosso, Valence and conduction intersubband transitions in SiGe, Ge-rich, quantum wells on [001] Si0.5Ge0.5 substrates: A tight-binding approach, J. Appl. Phys. 100, 093506 (2006).
  23. M. Virgilio and G. Grosso, Valley splitting and optical intersubband transitions at parallel and normal incidence in [001]-Ge/SiGe quantum wells, Phys. Rev. B 79, 165310 (2009).
  24. G. Pizzi, M. Virgilio, and G. Grosso, Tight-binding calculation of optical gain in tensile strained [001]-Ge/SiGe quantum wells, Nanotechnology 21, 055202 (2010).
  25. T. B. Boykin, G. Klimeck, and F. Oyafuso, Valence band effective-mass expressions in the sp3d5s* empirical tight-binding model applied to a Si and Ge parametrization, Phys. Rev. B 69, 115201 (2004).
  26. J.-M. Jancu, R. Scholz, F. Beltram, and F. Bassani, Empirical spds* tight-binding calculation for cubic semiconductors: General method and material parameters, Phys. Rev. B 57, 6493 (1998).
  27. G. Isella, D. Chrastina, B. Rössner, T. Hackbarth, H. J. Herzog, U. König, and H. von Känel, Low-energy plasma-enhanced chemical vapor deposition for strained Si and Ge heterostructures and devices, Solid State Electron. 48, 1317 (2004).
  28. F. Isa, J. A. Schmidt, S. Aghion, E. Napolitani, G. Isella, and R. Ferragut, Hole and positron interaction with vacancies and p-type dopants in epitaxially grown silicon, J. Appl. Phys. 135, 165704 (2024).
  29. C. G. Darwin, XXXIV. The theory of X-ray reflexion, Philos. Mag. 27, 315 (1914).
  30. D. Kriegner, E. Wintersberger, and J. Stangl, xrayutilities: A versatile tool for reciprocal space conversion of scattering data recorded with linear and area detectors, J. Appl. Crystallogr. 46, 1162 (2013).
  31. C. Ndebeka-Bandou, F. Carosella, R. Ferreira, A. Wacker, and G. Bastard, Free carrier absorption and inter-subband transitions in imperfect heterostructures, Semicond. Sci. Technol. 29, 023001 (2014).
  32. E. R. Weber, R. K. Willardson, H. C. Liu, and F. Capasso, Intersubband Transitions in Quantum Wells (Academic Press, Cambridge, UK, 1999).
  33. M. Geiser, C. Walther, G. Scalari, M. Beck, M. Fischer, L. Nevou, and J. Faist, Strong light-matter coupling at terahertz frequencies at room temperature in electronic LC resonators, Appl. Phys. Lett. 97, 191107 (2010).
  34. N. A. Polonsky, S. A. Virko, O. N. Poklonskaya, and A. G. Zabrodskii, Transition temperature from band to hopping direct current conduction in crystalline semiconductors with hydrogen-like impurities: Heat versus Coulomb attraction, J. Appl. Phys. 110, 123702 (2011).
  35. A. V. Buyanov, A. C. Ferreira, E. Söderström, I. A. Buyanova, P. O. Holtz, B. Sernelius, B. Monemar, M. Sundaram, K. Campman, J. L. Merz, and A. C. Gossard, Thermally activated intersubband and hopping transport in center-doped p-type GaAs/AlxGa1−xAs quantum wells, Phys. Rev. B 53, 1357 (1996).
  36. T. F. Lee and T. C. McGill, Variation of impurity—to—band activation energies with impurity density, J. Appl. Phys. 46, 373 (1975).
  37. S. J. Allen Jr., D. C. Tsui, and B. Vinter, On the absorption of infrared radiation by electrons in semiconductor inversion layers, Solid State Commun. 20, 425 (1976).
  38. T. Fromherz, E. Koppensteiner, M. Helm, G. Bauer, J. F. Nützel, and G. Abstreiter, Hole energy levels and intersubband absorption in modulation-doped Si/Si1−xGex multiple quantum wells, Phys. Rev. B 50, 15073 (1994).
  39. S. Calcaterra and M. Faverzani, Data underlying the paper titled “Optical and structural properties of p-doped Ge/SiGe multiple quantum wells for mid-infrared photonics” [Data set], Zenodo (2025), https://doi.org/10.5281/zenodo.14864906.

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Phys. Rev. B 112, 045429– Published 28 July, 2025
  • Received 3 March 2025
  • Revised 28 May 2025
  • Accepted 23 June 2025
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Published by the American Physical Society under the terms of the Creative Commons Attribution 4.0 International license. Further distribution of this work must maintain attribution to the author(s) and the published article's title, journal citation, and DOI.

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