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Identifying open-orbit topological surface states in dual topological semimetal TaSb2

Susmita Changdar1,2,*, Heike Schlörb1, Oleksandr Suvorov1, Dmitri V. Efremov1, Alexander Yaresko3, Rui Lou1,4, Alexander Fedorov1,4, Bernd Büchner1, Andy Thomas1 et al.

Sergey Borisenko1,† and Setti Thirupathaiah2,‡

  • *Contact author: s.changdar@ifw-dresden.de
  • †Contact author: s.borisenko@ifw-dresden.de
  • ‡Contact author: setti@bose.res.in

Phys. Rev. B 114, 105414 – Published 20 August, 2026

DOI: https://doi.org/10.1103/9gk1-krjp

Abstract

TaSb2, a member of the TmPn2 family of materials, hosts the very rare dual topological phase—weak topological insulating state and topological crystalline insulating state along different crystallographic orientations. So far, studies on the electronic structure of TmPn2 compounds have focused on their overall electronic structure and the bulk open-orbit Fermi surfaces. Using angle-resolved photoemission spectroscopy, density functional theory calculations, and transport measurements, we distinguish the intertwined bulk and surface states on the weakly topological (201¯) plane of TaSb2. We identify multiple electron- and holelike bulk bands, yielding a near-perfect carrier compensation. Crucially, we observe open-orbit FSs near M¯ and parallel to Γ¯−Y¯ direction that are entirely of surface origin. The surface states also exhibit band crossing at ∼0.6eV below Fermi level at the time-reversal invariant momentum M¯, indicating nontrivial band topology. Consistent with this, magnetotransport measurements display weak antilocalization, establishing TaSb2 as a platform for spin-polarized topological transport on a weakly topological surface.

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