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    Joule heating and electronic Gurzhi effect in hydrodynamic differential transport in an electron liquid

    Yi Wang1,2, Shu-Yu Zheng3, Li Lu3, Kai Chang4, and Chi Zhang1,2,5,*

    • *Contact author: zhangchi@semi.ac.cn

    Phys. Rev. B 113, 195302 – Published 13 May, 2026

    DOI: https://doi.org/10.1103/9ckn-fzpc

    Abstract

    We perform a differential resistance study in the hydrodynamic regime of an electron liquid in GaAs/AlGaAs quantum wells. At zero magnetic field (B) a Lorentzian profile occurs in the nonlinear transport driven by a U-turn (ac) current loop, in (ac+dc) measurements a minimum deepens with the external dc current bias (jdc). Our analysis shows that the observed electronic transport valley induced by jdc is attributed to the Joule heating effect on the electron temperature (Te) of the electron liquid. Quantitatively, we demonstrate that the viscosity resistivity (Δρ) is proportional to T−2 and is consistent with the dc-current-induced electronic Gurzhi effect in various configurations of measurement.

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