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    Laser-engineered Γ-point topology in trigonal bismuthene

    Zhe Li1,*, Haijun Cao1,2, and Sheng Meng1,2,3,†

    • *Contact author: lizhe21@iphy.ac.cn
    • †Contact author: smeng@iphy.ac.cn

    Phys. Rev. B 112, 235118 – Published 5 December, 2025

    DOI: https://doi.org/10.1103/94ls-z43y

    Abstract

    The Γ-point topology represents a significant segment in the family of topological insulators. Here we provide a comprehensive prediction of light-induced Γ-point-based topological manipulation in trigonal bismuthene and its derivatives. Our findings unveil a two-stage process of topological phase transitions (TPT) as the laser intensity increases. Initially, a quantum-spin-Hall or metallic state transitions to a quantum-anomalous-Hall (QAH) state (C=±3), followed by another TPT that yields a compensated Chern-insulating state (C=0). The trigonal warping model accounts for these states, describing the C3z-rotational band-inversion process, which is determined by ±1 orders of replica bands. Notably, this high Chern-number QAH state persists over a broad range of laser parameters. It remains functional beyond room temperature, as indicated by the substantial global energy gaps (≥60meV) that are less constrained by other factors, including magnetic transition temperatures and doping effects. Our work provides a comprehensive roadmap towards the designer Γ-point topology under laser excitation, facilitating applications of artificial topological materials.

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