Indium phosphide (InP) has attracted significant interest in high-frequency electronics, optoelectronics, and photovoltaics due to its wide band gap, high electron saturation velocity, and superior electron mobility. However, its relatively low hole mobility remains a pivotal bottleneck for practical applications. This study, employing mode-level first-principles calculations, elucidates that interband electron-phonon scattering is the primary factor limiting hole mobility in InP. Our results show that uniaxial strain induces splitting of the light-hole ($lh$) and heavy-hole ($hh$) bands near the valence band maximum. This splitting significantly suppresses the $lh-hh$ interband scattering, thereby substantially enhancing hole mobility. Furthermore, tailored uniaxial strain can enhance electron mobility by reducing scattering rates near the conduction band minimum. Specifically, our predictions indicate that hole mobility in InP along the [100] and [001] directions increases by approximately $240\%$ and $88\%$, respectively, under uniaxial compressive strain of $4\%$. These findings uncover a carrier transport mechanism and provide a generalized strategy for enhancing hole mobility in zinc-blende semiconductors.

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• Carrier dynamics
• Strain
• Semiconductors
• Density functional calculations