Twisted bilayer graphene aligned with hexagonal boron nitride (TBG/hBN) hosts rich topological and correlated quantum phases, such as (fractional) Chern insulators, whose character is dictated by the topology of the moiré flat band. This topology is highly sensitive to several material parameters in the continuum model, yet a systematic understanding of their combined influence has been lacking. Here, we present a comprehensive study of topological phase transitions in TBG/hBN by varying the interlayer hopping strengths ($w_0,w_1$) and hBN-induced staggered potential, both with and without the hBN moiré potential. We map out Chern number phase diagrams across a broad, experimentally relevant parameter space, revealing a progressive enrichment of the topological landscape including multiple high-Chern-number ($C$ = 3, 4, and 5) states. Each transition is linked to distinct band-inversion mechanisms at generic $C_3$-symmetric $k$ points, high-symmetry momenta, or parabolic touchings, clearly reflecting in the evolution of the Berry curvature. Our results offer theoretical insights that help interpret existing experimental observations, elucidate the mechanisms driving these topological phase transitions, and facilitate the exploration of topological states in TBG/hBN and related moiré systems.

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• Chern number
• Flat bands
• Topological phase transition
• Graphene
• Topological materials
• Twisted films
• Band structure methods
• k dot p method