The precise on/off switching of the current channel via gate voltage in transistors constitutes the foundational principle of modern electronics. This paradigm of electric field control over charge carriers has not only revolutionized information processing technologies but has also inspired research frontiers in manipulating the intrinsic properties of materials through external fields. Here, we propose a physical mechanism based on electric field control of optical absorption and emission (OAE) switching, realizing gate-controlled OAE switching, and provide specific implementation schemes. We first demonstrate the theoretical maximum of the transition dipole moment (TDM) in a one-dimensional system and propose that one-dimensional topological insulators precisely satisfy this condition. More importantly, we find that under electric field modulation, the TDM of the system can be reduced from its theoretical maximum to near zero, thereby enabling gate-controlled switching of OAE. This mechanism is validated through first-principles calculations on polyacetylene quantum dots. Our findings establish a mechanism for the electric-field modulation of optical properties, thereby enabling OAE switching and opening avenues toward advanced electro-optic devices.

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• Electronic structure of atoms & molecules
• First-principles calculations
• Light-matter interaction
• Topological materials