Boron vacancies ($V_B^{-}$) in hexagonal boron nitride (hBN) have emerged as a promising platform for two-dimensional (2D) quantum sensors capable of operating at atomic-scale proximity. However, the mechanisms responsible for photoluminescence quenching in thin hBN sensing layers when placed in contact with absorptive materials remain largely unexplored. In this Letter, we investigate nonradiative Förster resonance energy transfer (FRET) between $V_B^{-}$ centers and either monolayer graphene or 2D semiconductors. Strikingly, we find that the FRET rate is negligible for hBN sensing layers thicker than 3 nm, highlighting the potential of $V_B^{-}$ centers for integration into ultrathin quantum sensors within van der Waals heterostructures. Furthermore, we experimentally extract the intrinsic radiative decay rate of $V_B^{-}$ defects.

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• Color centers
• Quantum sensing
• Hexagonal boron nitride
• Optically detected magnetic resonance
• Photoluminescence
• Time-resolved photoluminescence