As-, Sb-, and Bi-hyperdoped $n$-type Si layers are fabricated by ion implantation followed by pulsed laser annealing to systematically investigate dopant-dependent transport behavior. The resulting single-crystalline $n^{++}$ layers, with dopant concentrations up to $2.0\times {10}^{21} {\mathrm{cm}}^{-3}$, exhibit metalliclike behavior with carrier densities above $7.5\times {10}^{19} {\mathrm{cm}}^{-3}$, and mobilities exceeding 50 ${\mathrm{cm}}^2/\mathrm{V}\mathrm{s}$. Phase-coherence lengths are extracted from magnetoconductance measurements using the two-dimensional Hikami-Larkin-Nagaoka model and reach 45–120 nm at low temperatures. A clear competition between weak localization (WL) and weak antilocalization (WAL) is observed in Bi-hyperdoped samples. Moreover, Si:Sb retains longer phase coherence at elevated temperatures, whereas structural disorder shortens low-temperature coherence in Si:Bi and strong spin-orbit scattering drives its observed WL-WAL crossover. In Si:Bi, the spin-orbit length ranges from 30 to 67 nm and shows no clear monotonic temperature dependence. These dopant-dependent transport characteristics may inform the design of silicon-based quantum and spintronic devices.

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• Charge
• Crystallization
• Dopants
• Doping effects
• Impurities
• Ion impact & scattering
• Localization
• Structural properties