Several studies propose two-dimensional (2D) materials as candidates for spintronic and valleytronic devices. The capability to access two well-defined spin-valley polarization states is the main factor for a good spin-valleytronic device. Each 2D material possesses certain characteristics that can improve the spin-valley polarization. Here, we study the spin and valley transport properties in single ferromagnetic $1T^{\prime }\text{−}{\mathrm{MoS}}_2$ junctions. The transmission probabilities are calculated with the transfer matrix method. The Landauer-Büttiker formalism is used to compute the conductance. We take into account an external electric field to modulate the band gap of the $1T^{\prime }\text{−}{\mathrm{MoS}}_2$ monolayer. Also, the proximity effect originating from the ferromagnetic layer interaction with the $1T^{\prime }\text{−}{\mathrm{MoS}}_2$ monolayer is considered. The combination of both the external electric field and the proximity effect gives rise to two well-defined positive and negative spin-valley polarization states. These findings indicate that the proposed system can be suitable for spintronic and valleytronic devices.

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• Ballistic transport
• Spin polarization
• Spintronics
• Valleytronics
• Magnetic tunnel junctions
• Transition metal dichalcogenides
• Landauer formula
• Transfer matrix method