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    Photoinduced dc Hall current in few-layer black phosphorus with a gate-tunable Floquet gap

    Taehun Kim*, Hansol Kim*, Dongeun Kim, and Hongki Min†

    • *These authors contributed equally to this work.
    • †Contact author: hmin@snu.ac.kr

    Phys. Rev. B 112, 085145 – Published 25 August, 2025

    DOI: https://doi.org/10.1103/8c1n-8jh8

    Abstract

    We theoretically explore Floquet engineering in few-layer black phosphorus (fBP) under time-periodic driving. Motivated by the ability of circularly polarized light to induce nontrivial topological states at Dirac nodes, we investigate the emergence of a photoinduced dc Hall effect in the Dirac semimetal phase of fBP. Starting from a low-energy continuum model, we derive the effective Floquet Hamiltonian and analytically calculate the Berry curvature, demonstrating the opening of a topological gap. We also perform lattice-model calculations incorporating a self-consistent Hartree method to compute Floquet band structures and dc Hall conductivity under a perpendicular electric field. Our results reveal that the dc Hall current in fBP can be effectively tuned via a periodic driving field and electrostatic gating.

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