The presence of carriers and van Hove singularities is essential for the emergence of intraband and interband plasmons, as evidenced by studies on small-angle twisted bilayer transition metal dichalcogenides and graphene, where van Hove singularities are induced by flat bands. In this work, we employ a tight-binding model in conjunction with the random phase approximation to investigate charge-neutral 2H-stacked bilayer ${\mathrm{MoS}}_2$ without flat bands. We demonstrate that both intraband and interband plasmons, along with their lifetimes, can be effectively modulated by electric fields. These phenomena are attributed to the semiconductor-to-semimetal transition and the electric field-induced van Hove singularities near the Fermi energy. Our results indicate that the interlayer electronic transition barely affects in-phase plasmon modes, while strongly modifying out-of-phase ones. Furthermore, plasmonic characteristics remain robust against twist angle for electric fields between 0.3 and 0.4 eV/Å. This insensitivity facilitates experimental realization of plasmon modulation without requiring precise twist angle control. Finally, the effects of the intrinsic electron doping and the screening using Keldysh potential on plasmons are discussed.

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• Electronic structure
• Plasmons
• Transition metal dichalcogenides
• Tight-binding model