High-throughput discovery and strain engineering of altermagnetic monolayers
Phys. Rev. B 114, 014415 – Published 13 July, 2026
DOI: https://doi.org/10.1103/821z-nv3s
Abstract
As a newly classified magnetic phase, altermagnetism integrates characteristics of conventional antiferromagnetism and ferromagnetism, exhibiting zero net magnetization and anisotropic spin-splitting. Two-dimensional altermagnets, in particular, offer significant potential for spintronic transport applications. However, the scarcity of intrinsic two-dimensional altermagnets has substantially impeded related research. Combining symmetry analysis, high-throughput computational screening, and first-principles calculations, we uncover over 300 stable monolayers that exhibit an altermagnetic ground state. These materials display a diverse even-parity anisotropic waveform and layer symmetries and reveal several hitherto unreported layer groups capable of supporting altermagnetism. Furthermore, we demonstrate strain-mediated switching of spin-splitting waveforms, magnetic phase transitions, and reversible electric polarization and anomalous Hall conductivity in these two-dimensional altermagnets. This work enriches the repository of intrinsic altermagnetic monolayers and provides a basis for designing and modulating low-power, high-speed spintronic devices.
