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  • Letter
  • Open Access

Quantum exciton solid with embedded electron-hole solids in double-layer WSe2

Meizhen Huang1,*, Zefei Wu1,*,†, Chenxuan Lou1,*, S. T. Chui2,‡, and Ning Wang1,§

  • *These authors contributed equally to this work.
  • †Contact author: zefeiw@gmail.com
  • ‡Contact author: chui@udel.edu
  • §Contact author: phwang@ust.hk
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Phys. Rev. B 113, L161406 – Published 14 April, 2026

DOI: https://doi.org/10.1103/7y5q-r7zj

Abstract

We studied double-layer WSe2 stacked on opposite sides of thin layers of hexagonal Boron nitride with different densities of electrons and holes. For a fixed hole density, the Coulomb drag resistance is found to exhibit plateaus approximately equal to −h/(4e2) and −h/(2e2) as the electron density is changed. When the number of electrons is equal to the number of holes, an exciton solid forms whose transport of quantum edge defects gives rise to the drag resistance. When the electron and hole densities are different, the excess electrons form a solid embedded in the exciton solid. The Coulomb drag resistance of the exciton solid comes from the one-dimensional transport of the two lowest energy channels of quantum edge vacancy-interstitial pairs. This corresponds to the first plateau. With the embedded solid, one of these channels is blocked. This corresponds to the second plateau. Transport experiments in the Corbino geometry with no edges and extra heavier holes were carried out. The plateaus disappeared. Three peaks in the resistance at different hole densities were observed. We interpret that the three peaks correspond to the commensurate exciton and two classes of hole solids. We performed phonon calculations of these states and found that the stability of these exciton-based quantum solids shows good agreement with experiment. Our results establish classes of extreme quantum solid states, opening additional avenues for the study of strongly correlated quantum transport phenomena involving quantum defect states.

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Information

Phys. Rev. B 113, L161406– Published 14 April, 2026
  • Received 29 September 2025
  • Revised 26 February 2026
  • Accepted 11 March 2026
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