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    Spin Seebeck effect in correlated antiferromagnetic V2O3

    Renjie Luo1, Tanner J. Legvold1,*, Gage Eichman1, Henry Navarro2,3, Ali C. Basaran2,4, Erbin Qiu2, Ivan K. Schuller2, and Douglas Natelson1,5,6,7,†

    • 1Department of Physics and Astronomy, Rice University, Houston, Texas 77005, USA
    • 2Department of Physics and Center for Advanced Nanoscience, University of California-San Diego, La Jolla, California 92093, USA
    • 3Department of Physics, Andrews University, Berrien Springs, Michigan 49104, USA
    • 4General Atomics, San Diego, California 92121, USA
    • 5Department of Electrical and Computer Engineering and Department of Materials Science and NanoEngineering, Rice University, Houston, Texas 77005, USA
    • 6Rice Center for Quantum Materials, Smalley Curl Institute, Rice University, Houston, Texas 77005, USA
    • 7Rice Advanced Materials Institute, Rice University, Houston, Texas 77005, USA

    • *Deceased
    • †Contact author: natelson@rice.edu

    Phys. Rev. B 112, 184421 – Published 18 November, 2025

    DOI: https://doi.org/10.1103/7xhk-3pc2

    Abstract

    The spin Seebeck effect is useful for probing the spin correlations and magnetic order in magnetic insulators. Here, we report a strong local spin Seebeck effect (LSSE) in antiferromagnetic V2O3 thin films. The LSSE response at cryogenic temperatures increases as a function of the external magnetic field until it approaches saturation. The response at a given power and field exhibits a nonmonotonic temperature dependence, with a pronounced peak that shifts toward higher temperatures as the field increases. Furthermore, the magnitude of the LSSE signal decreases consistently with increasing thickness, implying that the bulk SSE dominates any interfacial contribution. This negative correlation between the SSE and the thickness implies that the magnon energy relaxation length in V2O3 is shorter than the thickness of our thinnest film, 50 nm, consistent with the strong spin-lattice coupling in this material.

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