A prerequisite to using the net spin polarization generated by a source-drain bias in three-dimensional topological insulators for spintronic applications is understanding how such a bias alters the transport properties of these materials. At low temperatures, quantum corrections can dominate the temperature dependence of the resistance. Although a dc bias does not break time-reversal symmetry and is therefore not expected to suppress quantum corrections, an increase of the electron temperature due to Joule heating can cause a suppression. This suppression at finite bias can lead to a non-Ohmic differential resistance in the three-dimensional topological insulator (${\mathrm{Bi}}_{1-x}{\mathrm{Sb}}_x{)}_2{\mathrm{Te}}_3$, consisting of a zero-bias resistance peak (from electron-electron interactions) and a high-bias background (from weak antilocalization). We show that the bias voltage dependence of quantum corrections can be mapped to the temperature dependence, while the heating effect on the lattice temperature remains small. When searching for non-Ohmic effects due to novel phenomena in three-dimensional topological insulators, Joule heating should not be overlooked.

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• Magnetotransport
• Quantum interference effects
• Temperature
• Topological insulators
• Resistivity measurements