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    Large negative magnetoresistance induced by deformation in the Fermi surface of an antiferromagnetic EuMgPb single crystal

    Yulong Wang1,2,*, Zhihao Liu1,2,*, Yuzhi Wang1,2, Chenglin Li1,2, Xuhui Wang3, Ke Liao1,2, Quansheng Wu1,2,†, and Gang Wang1,‡

    • *These authors contributed equally to this work.
    • †Contact author: quansheng.wu@iphy.ac.cn
    • ‡Contact author: gangwang@iphy.ac.cn

    Phys. Rev. B 113, 024425 – Published 22 January, 2026

    DOI: https://doi.org/10.1103/7tkr-16rc

    Abstract

    Large negative magnetoresistance (NMR) has attracted tremendous attention for its unique performance in spin electronics. Up to now, most of the mechanisms proposed to explain NMR are only effective in limited systems. In an antiferromagnetic EuMgPb single crystal, we observed a large NMR up to −24% at 14 T, 10 K, excluding contributions from weak localization, chiral anomaly, and magnetic scattering. Supported by first-principles calculations, we propose that the deformation in the Fermi surface of the antiferromagnetic ground state, resulting from the breaking PT symmetry under magnetic field, primarily contributes to NMR. In this way, we provide a general mechanism for NMR that is suitable for various materials in nondisordered antiferromagnetic systems.

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