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Multiple magnetic transitions, anomalous Hall effect, and tunable surface states in Mn(Bi1−xSbx)4Te7

Chandan De1,2,3, Keisuke Fukutani1,4, Junho Seo1,5, Roland Stania1, Koichiro Yaji6, Kenta Kuroda7,8,9,10, Kenya Shimada9,10,11, Jun Sung Kim1,5, Han Woong Yeom1 et al.

Sang-Wook Cheong2,12,*

  • 1Center for Artificial Low Dimensional Electronic Systems, Institute for Basic Science (IBS), Pohang 37673, Korea
  • 2Laboratory of Pohang Emergent Materials, Pohang Accelerator Laboratory, Pohang 37673, Korea
  • 3Quantum Materials Science Unit, Okinawa Institute of Science and Technology (OIST), Okinawa 904-0495, Japan
  • 4Institute for Molecular Science, Okazaki, Aichi 444-8585, Japan
  • 5Department of Physics, Pohang University of Science and Technology (POSTECH), Pohang 37673, Korea
  • 6Center for Basic Research on Materials, National Institute for Materials Science, 3-13 Sakura, Tsukuba, Ibaraki 305-0003, Japan
  • 7Institute for Solid State Physics, University of Tokyo, Kashiwa 277-8581, Japan
  • 8Graduate School of Advanced Science and Engineering, Hiroshima University, Higashi-Hiroshima, Hiroshima 739-8526, Japan
  • 9International Institute for Sustainability with Knotted Chiral Meta Matter (WPI-SKCM2), Hiroshima University, Higashi-Hiroshima, Hiroshima 739-8526, Japan
  • 10Research Institute for Semiconductor Engineering, Hiroshima University, Higashi-Hiroshima, Hiroshima 739-8527, Japan
  • 11Research Institute for Synchrotron Radiation Science (HiSOR), Hiroshima University, 2-313 Kagamiyama, Higashi-Hiroshima 739-0046, Japan
  • 12Keck Center for Quantum Magnetism and Department of Physics & Astronomy, Rutgers University, 136 Frelinghuysen Road, Piscataway, New Jersey 08854, USA

  • *Contact author: sangc@physics.rutgers.edu

Phys. Rev. B 112, 085151 – Published 27 August, 2025

DOI: https://doi.org/10.1103/7swz-xkrt

Abstract

The anomalous Hall effect due to an intrinsic magnetic ordering combined with topological electronic states is at the forefront of recent study in condensed matter physics. The seminal compound MnBi2Te4 has fueled an enormous amount of interest in the study of various exotic quantum phenomena such as the axion insulator state, the Chern insulator state, and the quantum anomalous Hall effect on this material as well as its heterostructural cousins (MnBi2Te4)(Bi2Te3)n. Despite the theoretically expected gapped Dirac surface states in these time-reversal symmetry broken topological materials, the electronic band structures are variously reported with regard to the presence of the band gap in the Dirac cone. Here we report on Sb-doped higher-order Mn-Bi-Te magnetic topological materials in our combined study of magnetotransport and angle-resolved photoemission spectroscopy. We found multiple magnetic ground states in the Sb-doped antiferromagnetic topological insulator MnBi4Te7, driven by a delicate balance of magnetic interactions along the van der Waals interlayer direction. Additionally, we detected a gradual shift of the Fermi level from the conduction band to the valence band, accompanied by charge compensation at approximately 33% Sb doping. Interestingly, we observed the gapless Dirac states in pristine MnBi4Te7 and the gapped states in Sb-doped MnBi4Te7. We explored this unconventional scenario in the light of recent studies from various research groups.

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