Predicting interfacial electronic properties with quantitative accuracy is essential for the rational design of next-generation electronic and optoelectronic devices. We present a nonempirical screened-exchange dielectric-dependent range-separated hybrid (SE-DD-RSH) functional, in which the fraction of exact exchange is determined by the inverse macroscopic dielectric constant, and the range-separation parameter consistently accounts for both bulk and surface screening. This physically grounded framework removes the need for empirical tuning and provides a transferable description of bulk, surfaces, and interfaces. Benchmark calculations demonstrate that SE-DD-RSH yields band offsets and ionization potentials for semiconductor-semiconductor and semiconductor-oxide interfaces in excellent agreement with experiment and $GW$ theory. Furthermore, the computed surface band structures and optical spectra closely reproduce $GW$-BSE results, confirming the accuracy and robustness of the approach. Overall, SE-DD-RSH offers a computationally efficient and predictive first-principles route for modeling interfacial electronic and optical properties across diverse material systems.

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• Electronic structure
• Interfaces
• Density functional theory
• GW method
• Hybrid functionals