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    Topological transition induced by selective random defects on a honeycomb lattice

    Sogen Ikegami1,*, Kiyu Fukui2, Shun Okumura1,3,4,5, Yasuyuki Kato6, and Yukitoshi Motome1,†

    • *Contact author: ikegami-sogen443@g.ecc.u-tokyo.ac.jp
    • †Contact author: motome@ap.t.u-tokyo.ac.jp

    Phys. Rev. B 113, 144203 – Published 13 April, 2026

    DOI: https://doi.org/10.1103/7n4x-d4nb

    Abstract

    We investigate how the spectral and topological properties of electron systems evolve on a lattice that interpolates between the honeycomb and its 1/6-depleted structures through the introduction of selective random defects. We find that in certain parameter regimes, the topological properties of the two lattice systems are smoothly connected, whereas in other regimes, selective random defects induce a topological transition. Analysis based on an effective model reveals that the effect of selective random defects can be understood as a modulation of hopping amplitudes. Our results highlight the potential for designing and controlling the spectral and even topological properties of electronic systems across a wide range of material platforms.

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