Export citation

Export citation

Choose format for download:

Download Citation

    Comparative Raman study of well-protected atomically thin MnBi2Te4 and Bi2Te3

    Xinyu Chen1,*, Jingjing Gao1,*,†, Shuang Wu1, Zhongxun Guo1, Guangyi Huang1, Changlin Zheng1, Yuanbo Zhang1,2,3,‡, and Shiwei Wu1,2,3,§

    • 1State Key Laboratory of Surface Physics, Key Laboratory of Micro and Nano Photonic Structures (MOE), and Department of Physics, Fudan University, Shanghai 200433, China
    • 2Institute for Nanoelectronic Devices and Quantum Computing, and Zhangjiang Fudan International Innovation Center, Fudan University, Shanghai 200433, China
    • 3Shanghai Research Center for Quantum Sciences, Shanghai 201315, China

    • *These authors contributed equally to this work.
    • †Contact author: gaojj@fudan.edu.cn
    • ‡Contact author: zhyb@fudan.edu.cn
    • §Contact author: swwu@fudan.edu.cn

    Phys. Rev. B 112, 085408 – Published 6 August, 2025

    DOI: https://doi.org/10.1103/7kzb-41xm

    Abstract

    Recently demonstrated intrinsic antiferromagnetic topological insulator MnBi2Te4 has attracted wide attention, due to its elevated temperature for the observation of quantum phenomena, including quantum anomalous Hall effect and axion insulator states. However, the ongoing debate regarding layer-number determination and the surface layer degradation or reconstruction revealed by prior studies poses significant challenges for the in-depth exploration of the intrinsic properties of MnBi2Te4. Here, we present a systematic study of Raman spectroscopy in few-layer MnBi2Te4 samples, which were freshly cleaved and protected in an inert atmosphere throughout the experiments, ensuring adequate sample protection. We establish one-to-one correspondence between layer number and low-frequency breathing modes based on the uncontaminated samples. Comparison of the Raman spectra between MnBi2Te4 and Bi2Te3, as well as between samples near and far from regions sectioned by focused ion beam (FIB), demonstrates that surface-layer degradation from MnBi2Te4 to Bi2Te3 can be effectively prevented by avoiding air exposure and damage from the FIB. Our results provide a reliable reference for identifying the layer number and crystal structure. In this study, we provide a valuable benchmark for assessing the sample quality and pave the way for further realization on exotic topological phases of MnBi2Te4.

    Physics Subject Headings (PhySH)

    Authorization Required

    We need you to provide your credentials before accessing this content.

    Supplemental Material (Subscription Required)

    References (Subscription Required)

    Outline

    Information

    Sign In to Your Journals Account

    Filter

    Filter

    Article Lookup

    Enter a citation