Intrinsic nonlinear valley Nernst effect in the strained bilayer graphene
Phys. Rev. B 112, 144104 – Published 14 October, 2025
DOI: https://doi.org/10.1103/7j4p-4snc
Abstract
We theoretically analyze the nonlinear valley Nernst effect (NVNE) as the second-order response of temperature gradient through the semiclassical framework of electron dynamics. Our study shows that an intrinsic nonlinear pure valley current can be generated vertically to the applied temperature in the materials with both inversion and time-reversal symmetries. This intrinsic NVNE has a quantum origin from the quantum metric and shows independence from the relaxation time. We find that the local largest symmetry near the valleys for the nonvanishing intrinsic NVNE is a single mirror symmetry in two-dimensional systems. We theoretically investigate the intrinsic NVNE in the uniaxially strained gapless bilayer graphene and find the intrinsic NVNE can emerge when applying the temperature gradient vertically to the direction of strain. Interestingly, a transition from the compressive strain to the tensile one results in the sign reversal of the intrinsic NVNE.
