Orbital Hall effect characterizing higher-order topological phase transitions in monolayers of ferromagnetic materials
Phys. Rev. B 111, 235435 – Published 16 June, 2025
DOI: https://doi.org/10.1103/7bth-zkv6
Abstract
Manipulating orbital angular momentum (OAM) offers significant opportunities for advancing orbitronics in quantum device applications. In this study, we investigate topological phase transitions in two-dimensional ferromagnetic higher-order topological insulators driven by electronic correlations. We reveal that these transitions are intrinsically linked to the orbital Hall effect (OHE) through valley degrees. During the phase transitions, the OAM remains valley locked, giving rise to distinct orbital valley Hall effects, which reflect the inherent connection between topological properties and orbital transport. Using first-principles calculations and tight-binding models, we identify as a representative system to illustrate the intrinsic correlation between the OHE and higher-order topology. Notably, the OHE exhibits unique signatures across different topological phases, highlighting the interplay of electronic correlations and valley physics. This work provides a robust framework for understanding the interplay between topological phases and orbital transport phenomena, paving the way for different applications in topological materials and orbitronics.