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    Anomalous Hall effect in A-type antiferromagnetic bilayers

    Han-Zhong Liu1, Ran He1, Jia-Yue Zhan1, Dan Wang2,*, Meng-Dong He2,†, Nannan Luo1, Jiang Zeng1, Ke-Qiu Chen1, and Li-Ming Tang1,‡

    • *Contact author: wangdan@hnu.edu.cn
    • †Contact author: mengdonghe@csuft.edu.cn
    • ‡Contact author: lmtang@semi.ac.cn

    Phys. Rev. B 112, 134411 – Published 7 October, 2025

    DOI: https://doi.org/10.1103/795v-q3h7

    Abstract

    Altermagnetism (AM) is a recently proposed compensated magnetic state that exhibits the characteristics previously thought to be absent in conventional collinear antiferromagnets (AFMs), including the nonrelativistic spin splitting and a possible anomalous Hall effect (AHE). In two-dimensional (2D) A-type AFM bilayers with intralayer ferromagnetic and interlayer AFM coupling, interlayer operations serve as effective strategies to expand the family of 2D AM candidates. In this work, we systematically investigate the symmetry conditions enabling the AHE in collinear A-type AFM bilayers. We demonstrate that the in-plane Néel vector can induce finite anomalous Hall conductivity (AHC) in both twisted and mirror-stacked A-type AFM bilayers. However, spin splitting only exists in twisted bilayers and is absent in mirror-stacked ones. We further calculate the AHC in VS2 bilayers as a prototype and analyze the correlation between the direction of in-plane Néel vector and the AHC.

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