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    Achieving altermagnetism in monolayer holey graphyne via atomic manipulation

    Han-Bing Li1 and Zhi-Gang Shao1,2,*

    • 1Guangdong Basic Research Center of Excellence for Structure and Fundamental Interactions of Matter, Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, School of Physics, South China Normal University, Guangzhou 510006, China
    • 2Guangdong-Hong Kong Joint Laboratory of Quantum Matter, Frontier Research Institute for Physics, South China Normal University, Guangzhou 510006, China

    • *Contact author: zgshao@scnu.edu.cn

    Phys. Rev. B 111, 214420 – Published 11 June, 2025

    DOI: https://doi.org/10.1103/72r8-lq5r

    Abstract

    Achieving altermagnetism (AM) in two-dimensional materials is crucial for advancing the development of novel spintronic devices. This study introduces an innovative strategy to realize AM in monolayer materials by adsorbing nonmagnetic sp impurity atoms to construct planar bridges. Using holey graphyne (HGY) as the research object, first-principles calculations reveal that B and S impurity atoms can modulate the local electronic structure and trigger a superexchange mechanism, inducing a collinear compensated antiferromagnetic ground state with pronounced altermagnetic properties. Among these, the B adsorption system exhibits the best magnetic performance, with a Néel temperature reaching approximately 210 K. This work offers a flexible and effective strategy to achieve AM in single-atomic-layer materials and p-electron systems.

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