In this paper, a lateral spin tunneling FET based on an antimonene monolayer is investigated. This transistor combines a tunneling FET (TFET) and a spin FET (SFET). The nonequilibrium Green's function along with the tight-binding approach is utilized to calculate the current. Two parallel and antiparallel magnetizations are considered for the source and drain contacts, and two parallel and antiparallel currents are obtained. The effects of the magnetic alignment in the two contacts on the electrical performance of the STFET are investigated, and the performance of these two transistors is compared. The effects of surface roughness as a source of scattering on the behavior of these two transistors are studied. In addition, magnetoresistance is studied in this transistor. The antiparallel configuration demonstrates better behavior with lower OFF-current, higher ON-OFF-ratio, and lower SS.

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• Charge
• Electrical conductivity
• Electrical properties
• Magnetism
• Spin-orbit coupling
• Spintronics