Anisotropy-based two-dimensional heterostructures display distinct polarization traits, offering potential for detection and advanced applications. However, common studies often oversimplify anisotropy's properties to the use of anisotropic materials, leaving the true transmission of anisotropy in heterostructures as an unresolved question. Here, we demonstrate that the anisotropy is indeed transferred in the $\mathrm{Re}{\mathrm{S}}_2/\mathrm{WS}{\mathrm{e}}_2$ heterostructure via Raman scattering. The intrinsic anisotropy of the $\mathrm{WS}{\mathrm{e}}_2$ in the as-fabricated heterostructure is clearly enhanced by the overlying $\mathrm{Re}{\mathrm{S}}_2$ layer, while the anisotropy of monolayer $\mathrm{Re}{\mathrm{S}}_2$ is partially erased. The changes in the $E_{\mathrm{g}}$-like modes I and II in the $\mathrm{Re}{\mathrm{S}}_2$ indicate that lattice engineering leads to the formation of regional distortions, potentially causing the weakening of anisotropy in polarized Raman spectroscopy. Furthermore, this anisotropy transferability can be applied to other semiconductor and layered materials. These findings provide insights into interlayer coupling and anisotropy modulation in van der Waals heterostructures, paving the way for future studies on symmetry engineering, anisotropic charge transport, and the design of functional materials with tailored directional properties.

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• Nanophotonics
• Transition metal dichalcogenides
• Photoluminescence
• Raman spectroscopy