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Doping dependence of the low-temperature planar carrier density in overdoped YBa2Cu3O7−δ

R. Nicholls1,*,†, R. D. H. Hinlopen1,*,‡, J. Ayres1, T. Kotte2, T. Förster2, J. Park2, J. Sourd2, A. Carrington1, and N. E. Hussey1,3,§

  • *These authors contributed equally to this work.
  • †Contact author: beckie.nicholls@bristol.ac.uk
  • ‡Contact author: roemer.hinlopen@mpsd.mpg.de
  • §Contact author: n.e.hussey@bristol.ac.uk
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Phys. Rev. B 112, 064511 – Published 7 August, 2025

DOI: https://doi.org/10.1103/6kk9-xq3z

Abstract

Whether a quantum critical point (QCP) demarcates the end of the pseudogap (PG) regime in hole-doped cuprates at a singular doping level p*≈0.19 is still an open question. A crucial component of the puzzle is the manner in which the carrier density predicted by electronic structure calculations is recovered for p>p*. Here, we use magnetic fields up to 67 T to suppress superconductivity down to 50 K, allowing us to simultaneously measure the low-temperature Hall number nH and the in-plane resistivity anisotropy ρa/ρb in overdoped Y1−xCaxBa2Cu3O7−δ single crystals. We confirm a previous finding [S. Badoux et al., Nature (London) 531, 210 (2016)] that nH(50 K) exhibits a sharp increase below p* and use the measured resistivity anisotropy to obtain the planar carrier density npl=nH(ρa/ρb)−1. The doping dependence of npl(50 K) reveals two key findings: (i) At optimal doping, npl≈p, and (ii) the sharp rise in nH(p) is softened to such an extent that the full Fermi volume (npl=1+p) is only partially recovered at p*. The latter result disfavors a conventional QCP scenario in which the PG end point leads to a reconstructed Fermi surface.

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Phys. Rev. B 112, 064511– Published 7 August, 2025
  • Received 24 December 2024
  • Revised 17 June 2025
  • Accepted 1 July 2025
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