Origin of insulating-like behavior of under pressure: A first-principles study
Phys. Rev. B 112, 045113 – Published 9 July, 2025
DOI: https://doi.org/10.1103/6btw-jk8n
Abstract
Recent experimental study on superconductors has revealed an unexpected quantum phase transition from superconducting state to insulatinglike state under pressure [Zhou et al., Nat. Phys. 18, 406 (2022)]. To better understand the physical origin of this pressure-induced phenomenon, here we have studied the structural, electronic, and magnetic properties of undoped and O-doped (Bi2212) under pressures based on density-functional theory calculations. We first identified the crystal structure of undoped Bi2212 with the armchair distortions in the BiO layers and reproduced the insulating feature of the parent compound. Then we added an extra O atom to the parent compound to simulate the hole-doping effect and found that the structure with O dopant located in the van der Waals (vdW) gap is energetically the most stable. Further calculations on O-doped (0.125 holes/Cu) Bi2212 revealed that the pressure can induce charge redistributions between planes and BiO layers; specifically, Cu- orbitals gain electrons and Cu atoms rather than O atoms dominate around the Fermi level under high pressure. Along with the increasing pressure, the density of states at the Fermi level first reaches the maximum at GPa and then shows a valley near the Fermi level above 20 GPa, which may be responsible for the insulatinglike state observed in recent experiments. We suggest that the competition among several factors, such as the increase of electrons in the plane, the variation of in-plane hopping due to the shortened Cu-O distance, and the enhanced Coulomb repulsion among the electrons, could lead to the exotic transition under pressure. Our work provides an explanation of the high-pressure behaviors of Bi2212, which may facilitate a comprehensive understanding of cuprate superconductors.