Effects of short- and long-range disorder in the photoluminescence of quantum wells
Phys. Rev. B 112, 195431 – Published 20 November, 2025
DOI: https://doi.org/10.1103/6862-9pwd
Abstract
III-Sb semiconductor nanostructures provide sophisticated materials for developing optoelectronic applications in the near- and midinfrared wavelengths, for which the capability of engineering band alignments and wave functions is highly desirable. Segregation and diffusion at the interfaces, however, are features commonly found in Sb-based structures, impacting device performance and optical properties. By using type-II quantum wells as a platform, we demonstrate the effects of short- and long-range disorders in their optical emission, resulting in localization effects, broadening, and the emergence of a lower-energy band. The luminescence is characterized by varying excitation power, temperature, and magnetic field. Our findings demonstrate the presence of local potential minima of arising from the short-range contribution, the transition from correlated to uncorrelated electron-hole pair recombination, and the complex carrier dynamics in these systems.
