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    Programming multivortex polarization states in BaTiO3/SrTiO3 ferroelectric-dielectric composites

    Xianjiang Qin1, Taoping Bai1, Zhongyou Li1,2, Tengang Liu1, Xuhui Lou1, Haidong Fan1, Qingyuan Wang1, Delong He3, Jinbo Bai3 et al.

    Chuan Qiao1,*, Wentao Jiang1,4,†, and Xiaobao Tian1,‡

    • *Contact author: chuan.qiao@scu.edu.cn
    • †Contact author: scubme@aliyun.com
    • ‡Contact author: xbtian@scu.edu.cn

    Phys. Rev. B 113, 014105 – Published 7 January, 2026

    DOI: https://doi.org/10.1103/65qr-xc3n

    Abstract

    Traditional memory architectures are approaching their physical limitations in storage density and energy efficiency. As a result, the development of high-density, low-power memory devices has garnered significant research attention. The inherent bistability as well as topological protection of the topological vortex makes it a promising candidate for next-generation information storage with high storage density. However, controllable switching of multiple vortices within a single storage unit remains a critical challenge. This study focuses on a two-dimensional ferroelectric-dielectric composite consisting of a SrTiO3 matrix and four BaTiO3 nanoparticles, and proposes a novel control strategy to program the circulation of vortices in a single unit. Our phase-field simulation shows that four vortices can spontaneously evolve in the nanoparticles. Moreover, the composite can undergo both complete and partial multivortex switching under external electrical and mechanical loading, achieving 24 distinct multivortex polarization states that can realize the function of a programmable 4-bit storage unit. The proposed design can theoretically achieve a storage density of up to 3.82×1012bit/in2, offering new physical insights derived from strategic guidance for the structural design and functional control of multistate ferroelectric memory devices.

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