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    Semiconducting-to-metallic transition and spin-glass-like behavior in Cr0.68Se thin films

    Wenqiang Cui1,*, Guihao Jia2,*, Yaowu Liu2,*, Zichun Zhang2, Junhai Ren1, Zongwei Gao1, Shuai-Hua Ji2,3, Wanjun Jiang2,3, Ke He1,2,3 et al.

    Liguo Zhang1,†, Dapeng Zhao1,‡, Wei Li2,3,§, and Qi-Kun Xue1,2,3,4

    • *These authors contributed equally to this work.
    • †Contact author: zhanglg@baqis.ac.cn
    • ‡Contact author: zhaodp@baqis.ac.cn
    • §Contact author: weili83@mail.tsinghua.edu.cn

    Phys. Rev. B 111, 235436 – Published 16 June, 2025

    DOI: https://doi.org/10.1103/5ylq-4nlg

    Abstract

    Two-dimensional chromium chalcogenides Cr1−δSe have garnered significant interest owing to their intrinsic magnetic orders. In this study, we present the molecular beam epitaxy growth of Cr0.68Se thin films on SrTiO3(111) substrates through precise control of Cr/Se flux ratio. A semiconducting-to-metallic transition has been realized by annealing of the Cr0.68Se films, and the mechanism of the phase transition is elucidated by scanning tunneling microscopy. Magnetic measurements reveal that the metallic Cr0.68Se films exhibit spin-glass-like behavior and perpendicular magnetic anisotropy at low temperatures. We also observe the anomalous Hall effect in Cr0.68Se thin films, which possibly originates from the skew-scattering mechanism. Our findings not only provide valuable insights into the controversial magnetic and electrical properties of Cr1−δSe, but also advance their potential applications for spintronic device.

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