We carry out temperature-dependent scanning tunneling microscopy (STM) studies of the charge density wave (CDW) compound ${\mathrm{ZrTe}}_3$, which is intentionally doped with Hf. Previous bulk studies tie Hf doping to an enhancement of the CDW transition temperature $T_{\mathrm{CDW}}$. In our work, by combining STM measurements with density functional theory calculations, we observe and identify multiple defects in ${\mathrm{Zr}}_{0.95}{\mathrm{Hf}}_{0.05}{\mathrm{Te}}_3$. Surprisingly, instead of finding clear structural or electronic signatures associated with Hf dopants, we determine that the observed defects are consistent with Te and Zr vacancies. Further, our temperature-dependent STM measurements allow us to examine CDW pinning to both types of observed defects below and above $T_{\mathrm{CDW}}$.

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• Charge density waves
• Transition metal trichalcogenides
• Scanning tunneling microscopy