Wurtzite MnSe as a barrier for CdSe quantum wells with built-in electric field
Phys. Rev. B 113, 075305 – Published 11 February, 2026
DOI: https://doi.org/10.1103/5f5l-7c8f
Abstract
Altermagnetic materials have attracted a lot of attention recently due to numerous effects that have application potential and occur due to the spin-split band structure coexisting with the compensated magnetic order. Incorporation of such intriguing compounds into low-dimensional structures represents an important avenue towards exploiting and enhancing their functionalities. Prominent examples of this group are semiconductors well suited to the band-gap engineering strategies. Herein, we present visible-light-emitting CdSe quantum wells, in which wurtzite MnSe as an altermagnetic candidate plays the role of a barrier. Photoluminescence experiments with temporal resolution demonstrate that in such quantum wells, a built-in electric field is present and strongly influences the energies of the emitted photons, the dynamics of recombination, and excitation power dependence. Numerical simulations allow us to estimate that the magnitude of the electric field is . We anticipate that such quantum wells offer potential to probe the barrier properties and that wurtzite MnSe is an interesting platform to study the interplay of the altermagnetism and built-in electric field.
