We systematically investigate the nonlinear photogalvanic effect in few-layer graphene with various stacking orders, including AA- and AB-stacked bilayers, and AAA-, ABA-, and ABC-stacked trilayers. Using a tight-binding model to describe the electronic states, the shift current conductivity and jerk current conductivity are calculated over a broad spectral range from terahertz to visible frequencies. Our symmetry analysis reveals that a nonvanishing shift current emerges only in ABA-stacked trilayer graphene due to its broken inversion symmetry, with a peak conductivity reaching approximately $1.21\times {10}^{-13} \mathrm{A}\mathrm{m}/{\mathrm{V}}^2$ at optimal doping. In contrast, the jerk current, permitted in all structures, requires an in-plane static electric field and exhibits pronounced spectral tunability with chemical potential. These findings provide design principles for tunable, polarization-sensitive photodetection and energy-harvesting devices based on van der Waals few-layer films.

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• Nonlinear optics
• Photogalvanic effect
• Shift current
• Bilayer graphene
• Graphene
• Tight-binding model