All-CrSb triferroic tunnel junction: Magnetoresistance, electroresistance, elastoresistance, and photogalvanic effect
Phys. Rev. B 114, 175409 – Published 23 September, 2026
DOI: https://doi.org/10.1103/58b5-yj93
Abstract
Integrating altermagnetism with conventional ferroic orders simultaneously breaks spatial and time-reversal symmetries, offering a promising platform for realizing magnetoelectroelastic multifield control and for investigating light–matter interactions. Based on experimentally synthesized CrSb, alongside the theoretically predicted altermagnetic-ferroelastic biferroic NiAs-type monolayer and ferromagnetic-ferroelectric-ferroelastic triferroic wurtzite-type monolayer, we construct and investigate all-CrSb triferroic tunnel junctions (TFTJs) using NiAs/WZ heterostructures via symmetry analysis, density functional theory, and nonequilibrium Green's function approaches. Our results demonstrate that a giant tunneling magnetoresistance of 12 340%, a moderate tunneling electroresistance of 623%, a tunneling elastoresistance of 2523%, and a nearly perfect spin-filtering efficiency of 99%–100% can be achieved. Furthermore, the all-CrSb TFTJs are capable of self-powered photodetection, exhibiting a high extinction ratio of 456 and a photogalvanic effect (second-order optical nonlinearity). These findings provide a viable pathway toward miniaturized and integrated applications in magnetoelectric transport, microelectromechanical systems, optoelectronic memory, and logic devices.
