Synthesis, physical properties, and band structure of antiferromagnetic <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow><mi mathvariant="normal">C</mi><msub><mi mathvariant="normal">r</mi><mn>2</mn></msub><mi mathvariant="normal">S</mi><msub><mi mathvariant="normal">e</mi><mn>3</mn></msub></mrow></math>

Xiaoqing Qian; Wenhao Shen; Shouli Zhou; Zixin Cui; Zize Zheng; Wei Wei; Yingying Gao; Bin Li; Xiaofeng Xu; Wei Zhou; Chunqiang Xu

doi:10.1103/561h-2r2h

Synthesis, physical properties, and band structure of antiferromagnetic $C r_{2} S e_{3}$

Xiaoqing Qian¹, Wenhao Shen², Shouli Zhou ², Zixin Cui³, Zize Zheng¹, Wei Wei⁴, Yingying Gao ⁵, Bin Li ^3,6,7,*, Xiaofeng Xu ⁸ et al.

Wei Zhou^5,† and Chunqiang Xu^1,‡

¹School of Physical Science and Technology, Ningbo University, Ningbo 315211, China
²College of Information Engineering, Zhejiang University of Technology, Hangzhou 310023, China
³School of Science, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
⁴Institute of Physics, Henan Academy of Sciences, Zhengzhou 450046, China
⁵School of Electronic and Information Engineering, Suzhou University of Technology, Changshu 215500, China
⁶Jiangsu Provincial Engineering Research Center of Low Dimensional Physics and New Energy, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
⁷Jiangsu Physical Science Research Center, Nanjing 210093, China
⁸School of Physics, Zhejiang University of Technology, Hangzhou 310023, China

^*Contact author: libin@njupt.edu.cn
^†Contact author: wei.zhou@szut.edu.cn
^‡Contact author: xuchunqiang@nbu.edu.cn

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Phys. Rev. B 114, 024404 – Published 6 July, 2026

DOI: https://doi.org/10.1103/561h-2r2h

Abstract

Owing to the unique coupling effect between spin and topological order, antiferromagnetic topological materials hold significant application prospects in the fields of low-power spintronic devices and quantum computing, emerging as a research focus in the field of condensed matter physics. In this work, the detailed investigation of $C r_{2} S e_{3}$ , a type of antiferromagnetic topological material, was carried out. A combined approach of experimental characterization and first-principles calculations was employed to systematically explore its physical properties and band structure. Experimentally, detailed measurements were conducted on the resistivity, Hall effect, magnetic susceptibility, and heat capacity of $C r_{2} S e_{3}$ , confirming that it exhibits two antiferromagnetic transition temperatures, namely $T_{N 1} \approx 38 K$ and $T_{N 2} \approx 42 K$ , which reveals the antiferromagnetic ordered characteristics of the material. Theoretically, the electronic band structure of $C r_{2} S e_{3}$ was performed via first-principles calculations, providing theoretical support for its topological properties. Our investigations demonstrate that the Hall effect of $C r_{2} S e_{3}$ can be well fitted by the two-band carrier model; meanwhile, the existence of a possible anomalous Hall effect cannot be excluded, and such a possible anomalous Hall effect is further supported by the results of theoretical calculations. This study expands the investigation of antiferromagnetic topological materials, provides key experimental results for tuning the topological properties of $C r_{2} S e_{3}$ , and offers valuable insights for follow-up research on similar magnetic topological systems.

Physical Review B

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Synthesis, physical properties, and band structure of antiferromagnetic $C r_{2} S e_{3}$

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Synthesis, physical properties, and band structure of antiferromagnetic Cr2Se3

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Synthesis, physical properties, and band structure of antiferromagnetic $C r_{2} S e_{3}$