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    Magnetoelectric response arising from Zeeman quantum geometry

    Jie Cao1, Fenghua Qi2,*, Yuanyuan Xiang1, and Guojun Jin3,4,†

    • 1College of Mechanics and Engineering Science, Hohai University, Nanjing 210098, China
    • 2School of Electronic Engineering, Nanjing Xiaozhuang University, Nanjing 211171, China
    • 3School of Physics Science and Technology, Kunming University, Kunming 650214, China
    • 4National Laboratory of Solid State Microstructures, Department of Physics, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China

    • *Contact author: qifenghua.hi@163.com
    • †Contact author: gjin@nju.edu.cn

    Phys. Rev. B 112, 235145 – Published 15 December, 2025

    DOI: https://doi.org/10.1103/54qq-2qgh

    Abstract

    The quantum metric is a foundational quantity for Bloch states, yet it has garnered far less attention than its counterpart, i.e., the Berry curvature. Here, we investigate the magnetoelectric effects using Zeeman quantum geometry, which is defined in [Phys. Rev. Lett. 134, 116301 (2025)], aiming to unveil the role of the quantum metric in the context of linear response phenomena. At first, we establish the magnetic field-induced derivative formulas of current density and charge polarization in the framework of Zeeman quantum geometry. Then, in two-band systems, we determine the geometric relations between the Zeeman quantum geometry and the quantum geometric tensor. Furthermore, in two-band models with linear spin-orbit coupling, we derive the integral relation linking the magnetoelectric conductivity to the quantum metric. Finally, we put forward experimental measurement criteria for the Zeeman quantum geometry across a series of magnetic systems, including two-dimensional (2D) spiral skyrmions, 3D isotropic materials, and 2D magnetic topological insulators. Our work bridges the Zeeman quantum geometry and quantum geometry tensor, underscores the role of quantum metric in linear transport, and provides testable signatures to guide the design of topological magnetoelectric devices.

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