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    Slow-phonon control of spin Edelstein effect in Rashba d-wave altermagnets

    Mohsen Yarmohammadi1,*, Jacob Linder2, and James K. Freericks1

    • *Contact author: mohsen.yarmohammadi@georgetown.edu

    Phys. Rev. B 113, 184403 – Published 1 May, 2026

    DOI: https://doi.org/10.1103/4txy-gy8f

    Abstract

    Altermagnets have zero net magnetization yet feature spin-split bands. Here, we investigate how slow lattice vibrations (phonons) influence both the intrinsic and externally induced spin polarizations in two-dimensional d-wave altermagnets. For the induced spin polarization, we employ a Rashba continuum model with electron-phonon coupling (EPC) treated at the static-Holstein level and analyze the spin Edelstein effect using the Kubo linear-response formalism to probe EPC-induced contributions. We find that under a specific symmetry-lowering pattern such as a piezomagnetically active strain that explicitly breaks the inherent C4T symmetry, moderate-to-strong EPC progressively suppresses the induced polarization via both intraband and interband channels, with a threshold coupling marking the onset of complete spin Edelstein depolarization. The depolarization arises from a phonon-induced energy renormalization that leads to a complete collapse of the Fermi surface. While (de)polarization can occur even in the Rashba nonaltermagnetic phase, it remains isotropic. The presence of altermagnetism makes it anisotropic and breaks the conventional antisymmetry between spin susceptibilities that occurs with pure spin-orbit coupling, rendering the effect highly relevant for spintronic applications. We further investigate how the phonon coupling to the altermagnetic order, Rashba spin-orbit strength, and carrier doping collectively tune the depolarization. Our findings demonstrate that static phononic effects offer a powerful means for on-demand control of spin polarization, enabling reversible switching between spin-polarized and depolarized states—a key functionality for advancing spin logic architectures and optimizing next-generation spintronic devices.

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