Altermagnets enable nonrelativistic spin splitting without net magnetization, benefiting miniaturized and highly integrated spintronic devices. In this work, we investigate the physical mechanism by which ferroelectric substrates induce altermagnetism in antiferromagnetic materials through symmetry manipulation and magnetoelectric coupling effects. Using antiferromagnetic ${\mathrm{MnPSe}}_3$ and ferroelectric ${\mathrm{ReGeS}}_3$ as examples, we constructed both bilayer heterostructures and sandwich structures. Through multiple control strategies including twisting operations, optimizing stacking configurations, interlayer sliding, and polarization reversal, we achieved altermagnetic induction, antiferromagnetic-altermagnetic phase transitions, tunable spin-splitting level in band structures, and reversal of spin splitting in energy bands in the altermagnet. These results reveal the crucial role of interfacial charge transfer and lattice symmetry breaking in producing altermagnetism. Our findings demonstrate that the ferroelectric substrate breaks the $\mathcal{PT}$ symmetry while maintaining $[C_2\parallel M]$ symmetry in the antiferromagnetic layer, resulting in an alternating spin-splitting distribution in momentum space. Notably, in the sandwich structures, we successfully realize altermagnetism under strictly zero net polarization (antiferroelectric state). Furthermore, we achieve reversible switching between antiferromagnetic and altermagnetic phases as well as spin-splitting reversal in the altermagnet via twisting operations and polarization field control.

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• Altermagnetism
• Magnetism
• Magnetoelectric effect
• Heterostructures
• van der Waals systems
• Density functional calculations