The Edelstein effect in magnetic systems enables magnetization switching via the coupling between current-induced spin accumulation and intrinsic magnetic order and is therefore highly promising for next-generation spintronic devices. Realizing and manipulating the Edelstein effect in two-dimensional (2D) magnetic systems is particularly desirable for achieving high-efficiency and multifunctional spintronic applications. In this work, based on first-principles calculations and symmetry analysis, we demonstrate that the Edelstein effect can intrinsically arise in the 2D in-plane ferromagnetic semiconductor $2H\text{−}{\mathrm{VTe}}_2$, with its behavior strongly dependent on the magnetization orientation. For monolayer $2\mathrm{H}\text{−}{\mathrm{VTe}}_2$ with $D_{3h}$ crystal symmetry, under an applied current along the $+x$ direction, only the time-reversal-even $z$ component and the time-reversal-odd $y\left(x\right)$ component of the spin accumulation are allowed when the magnetization is aligned along $+x$ $(+y)$. For ferromagnetic bilayer $2H\text{−}{\mathrm{VTe}}_2$ in AB or BA stacking, where the crystal symmetry is reduced to $C_{3v}$, additional spin components emerge with the presence of in-plane magnetization. Specifically, for magnetization along $+x$ $(+y)$, besides $d{S}_z^{\mathrm{even}}$ and $d{S}_y^{\mathrm{odd}}(d{S}_z^{\mathrm{even}} \text{and} d{S}_x^{\mathrm{odd}})$, extra components such as $d{S}_y^{\mathrm{even}}\mathrm{and}$ $d{S}_z^{\mathrm{odd}}(d{S}_y^{\mathrm{even}})$ become allowed. Notably, these additional components can be reversibly switched by changing the stacking configuration from AB to BA via interlayer sliding, which is equivalent to applying a $M_{z}T$ operation. The parity dependence of Edelstein coefficients on the in-plane magnetization is also evaluated. Our results not only deepen the understanding of current-induced spin accumulation in 2D magnetic systems from both symmetry and first-principles perspectives but also identify $2H\text{−}{MX}_2$ materials as a promising platform for realizing intrinsic and tunable Edelstein effects in high-efficiency spin-orbit torque devices.

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• Electronic structure
• Spin accumulation
• Spin-orbit coupling
• Spintronics
• 2-dimensional systems
• First-principles calculations