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    Hedgehog Weyl-like spin texture in the two-dimensional chiral SnP2Se6 semiconductor

    Lixin Zhou1, Zhongjia Chen2,3, Yuanjun Jin2,3, Yingjie Wei1, Yu Guo1,*, Si Zhou2,3, Yan Su1, and Jijun Zhao2,3

    • 1Key Laboratory of Materials Modification by Laser, Ion and Electron Beams (Dalian University of Technology), Ministry of Education, Dalian 116024, China
    • 2Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, School of Physics, South China Normal University, Guangzhou 510006, China
    • 3Guangdong-Hong Kong Joint Laboratory of Quantum Matter, Frontier Research Institute for Physics, South China Normal University, Guangzhou 510006, China

    • *Contact author: guoyu_dlut@dlut.edu.cn

    Phys. Rev. B 113, 235431 – Published 22 June, 2026

    DOI: https://doi.org/10.1103/47ch-dfbz

    Abstract

    Two-dimensional (2D) semiconductors possessing strong spin-orbit coupling (SOC) and nontrivial topological features are central to the development of energy-efficient spintronics. While Weyl physics is extensively studied in semimetals, its realization in atomically thin semiconductors remains limited. Using first-principles calculations, we identify layered SnP2Se6 as a versatile topological semiconductor platform. In its monolayer form, the intrinsic structural chirality gives rise to a coexistence of Ising-type and Weyl-like (the properties of this material cannot be fully characterized as those of Dirac or Weyl materials) SOC. The latter is characterized by radial hedgehoglike spin textures—a signature of unique manifestation of Weyl-type SOC in a 2D chiral lattice within a 2D semiconductor—resulting in a significant intrinsic spin Hall conductivity (SHC) of up to 10.2 (ℏ/e) S/cm. In multilayer SnP2Se6, symmetry evolution facilitates a distinct regime where Weyl-like and Rashba spin textures coexist. This transition preserves substantial spin-charge conversion efficiency while introducing chirality-switchable components to the SHC tensor, providing a layer-dependent degree of freedom for spin manipulation. The interplay between strong SOC, topological band features, and structural chirality establishes SnP2Se6 as a platform for thickness-engineered spintronic devices.

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